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应用科学学报 ›› 1995, Vol. 13 ›› Issue (1): 39-45.

• 论文 • 上一篇    下一篇

白光快速退火注Si+砷化镓的X射线双晶衍射谱

顾宏, 夏冠群, 陈京一, 朱南昌, 沈鸿烈, 周祖尧   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1993-01-05 修回日期:1993-02-25 出版日期:1995-03-31 发布日期:1995-03-31
  • 基金资助:
    国家自然科学基金和科学院离子束开放实验室资助

X-RAY DOUBLE-CRYSATL DIFFRACTION SPECTRUM OF RAPID THERMAL ANNEALED Si+ IMPLANTED GaAs

GU HONG, XIA GUANQUN, CHEN JINGYI, ZHU NANCHANG, SHENG HONGLIE, ZHOU ZHUYAO   

  1. Shanghai Institute of Metallurgy, Academia Science
  • Received:1993-01-05 Revised:1993-02-25 Online:1995-03-31 Published:1995-03-31

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摘要： 对注Si+的GaAs样品(注入能量180keV、剂量5×1012~1015cm-2采用白光快速退火,测量其x射线双晶衍射谱并结合背散射,Hall测量结果,分析了注入引起的应变及掺杂机理。根据电学测量结果用迁移率理论计算了补偿比.结果表明:GaAs中Si+注入掺杂,在低剂量注入时,Si的两性是影响激活率的主要原因;高剂量注入时,残留间隙Si原子的存在是导致激活率低的主要因素。

关键词: GaAs, 双晶衍射, 离子注入

Abstract: GaAs films are implanted with Si ions at 180 keV with doses of 5×1012/cm2~1015/cm2 and then rapid thermal annealing is Performed by incoheret light.The strain and doping mechanisms are studied by double-crystal diffractometry in connection with backscattering and Hall measurement.The compensation ratios are calculated by using the Mobility theory.
The results suggest that when implanting at low doses,the amphoteric property of Si plays the main role in the activation effcieney, and that at high implanting doses the low electrical activation is caused by the presence of interstitial Si.

Key words: ion implantation, double-crystal diffruction, GaAs