YAG激光诱导硅光二极管产生等离子体的研究

应用科学学报 ›› 1995, Vol. 13 ›› Issue (2): 159-162.

YAG激光诱导硅光二极管产生等离子体的研究

倪晓武, 陆建, 贺安之

南京理工大学

收稿日期:1993-08-24 修回日期:1993-11-24 出版日期:1995-06-30 发布日期:1995-06-30

STUDY OF THE PLASMA PRODUCED BY YAG LASER ACTING UPON SILICON PHOTODIODE

NI XIAOIWU, LU JIAN, HE ANZHI

Nanjing University of Science and Technology

Received:1993-08-24 Revised:1993-11-24 Online:1995-06-30 Published:1995-06-30

摘要/Abstract

摘要： 作者就调Q-YAG激光诱导硅PIN结构二极管产生等离子体的理论和实验进行了研究,首次得到了激光诱导硅光二极管产生等离子体的M-Z干涉图及有关的计算结果。

关键词: PIN结, 激光产生等离子体, 干涉测量, 硅光二极管

Abstract: The plasma produced by the Q-switched YAG laser acting upon a silicon diode having a PIN junction has been investigated theoretically and experimentally.Mach-Zehnder interferograms of the plasma and related computed results have been obtained for the first time.

Key words: silicon photodiode, laser produced plasma, interferometry, PIN junetion

倪晓武, 陆建, 贺安之. YAG激光诱导硅光二极管产生等离子体的研究[J]. 应用科学学报, 1995, 13(2): 159-162.

NI XIAOIWU, LU JIAN, HE ANZHI. STUDY OF THE PLASMA PRODUCED BY YAG LASER ACTING UPON SILICON PHOTODIODE[J]. Journal of Applied Sciences, 1995, 13(2): 159-162.

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