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应用科学学报 ›› 1995, Vol. 13 ›› Issue (2): 189-194.

• 论文 • 上一篇    下一篇

未掺杂LECSIGaAs中总EL2浓度及其费米占据函数的分布

杨瑞霞1, 李光平2, 王琴2   

  1. 1. 河北工学院;
    2. 天津电子材料研究所
  • 收稿日期:1993-05-07 修回日期:1993-07-17 出版日期:1995-06-30 发布日期:1995-06-30

DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs

YANG RUIXIA1, LI GUANGPING2, WANG QIN2   

  1. 1. Hebei Institute of Technology;
    2. Tianjin Electronic Materials Research lnstitute
  • Received:1993-05-07 Revised:1993-07-17 Online:1995-06-30 Published:1995-06-30

PDF

97

被引次数

11

摘要： 用"多波长红外吸收"的方法测量了未掺杂半绝缘(SI) LECGaAs中电离的和电中性EL2浓度径向分布,并由此得到了总EL2浓度及其费米占据函数(fn)的分布,结果表明:电离的、电中性的和总的EL2及EL2的费米占据函数均呈不均匀分布,电中性的和总EL2浓度径向分布均为w形,电中性EL2W形径向分布不是由于fn的波动。

关键词: EL2, 红外吸收, 分布, 浓度, GaAs

Abstract: The distributions of ionized and neutral EL2 concentrations are measured by the multiple wavelength infrared absorption method in the undoped LECSI GaAs.The distributions of the total EL2 concentration and its Fermi occupancy function are also obtained from the measurement of the distrbutions of the ionized and neutral EL2 concentrations.The results indicate that all of the distributions of the ionized EL2 concentration,neutral EL2 concentration,total EL2 concentra-tion, and EL2 Fermi occupallcy function are inhomogeneous;that both total and neutral EL2 concentrations radial distributions are W-shaped;and that the W-shaped radial distribution of the neutral EL2 concentration is not due to the fluctuation of the Fermi occupancy function.

Key words: EL2, infrared absorption, distribution, concentration, GaAs