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应用科学学报 ›› 1995, Vol. 13 ›› Issue (4): 405-412.

• 论文 • 上一篇    下一篇

用化学浸蚀形成光致发光多孔硅的研究

莫要武, 安其霖, 陈炜, 刘祖刚, 蒋雪茵, 史伟民, 吴汶海   

  1. 上海大学嘉定校区
  • 收稿日期:1993-08-30 修回日期:1994-12-30 出版日期:1995-12-31 发布日期:1995-12-31

INVESTIGATION OF PHOTOLUMINESCENT POROUS SILICON FORMED BY CHEMICAL ETCHING

MO YAOWU, AN QILIN, CHEN WET, LIU ZUGANG, JIANG XUEYIN, SHI WEIMEN, WU WENHAI   

  1. Shanghai Unixersity, Jiading campus
  • Received:1993-08-30 Revised:1994-12-30 Online:1995-12-31 Published:1995-12-31

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摘要： 在HF-HNO3水溶液中化学浸蚀单晶硅,得到了具有可见光致发光的多孔硅层(PSL).金相显微镜和扫描电镜(SEM)观察表明,化学浸蚀后的表面呈绒面状,说明侵蚀具有各向异性。浸蚀过程中出现显色循环,当显色处于临界时间时,样品光致发光最强。与阳极氧化样品相比,化学侵蚀形成多孔硅的光致发光强度要弱近一个数量级,其峰值能量为1.94~2.04eV,半峰宽(FWHM)为0.35~0.41eV.还对比讨论了阳吸氧化多孔硅和化学浸蚀多孔硅的稳定性。

关键词: 硅, 光致发光, 化学浸蚀

Abstract: The formation of photoluminescent porous silicon layers (PSL) in HF-HKO3 based solution is reported,Photomicroscopy and scanning electron microscopy (SEM) reveal that the etched Si has valvet morphology.From the shape of hills on the surface varying with the orientation of Si wafer,we can conclude that chemical etching (CE) is preferential.Colour cycles appear in the etching process and while the colour cycles are at the critical time,the sample has the bnightest photoluminescence (PL).PL spectra show that the luminescent intensity of CE is nearly an order of magnitude smaller than that of PS formed by anodization.The peak energy of CE Si is from 1.94~2.04 eV,and the full width at half maximum intensity (FWHM) is from 0.25~0.41 eV.The Stability of CE Si is discussed,as well as that of PS formed by anodization.

Key words: silicon, chemical etching, photoluminescence