重掺硼的分子束外延硅的喇曼光谱研究

应用科学学报 ›› 1995, Vol. 13 ›› Issue (4): 413-418.

重掺硼的分子束外延硅的喇曼光谱研究

王建宝, 袁健, 杨敏, 黄大鸣, 陆方, 孙恒慧

复旦大学李政道物理学综合实验室

收稿日期:1993-11-18 修回日期:1994-03-06 出版日期:1995-12-31 发布日期:1995-12-31
基金资助:
国家自然科学基金资助项目及国家科委基础研究及应用基础研究重大项目

RAMAN SCATTERING INVESTIGATION OF HEAVILY BORON-DOPED SILICON FILMS GRCWN BY MOLECULAR BEAM EPITAXY

WANG JIANBAO, YUAN JIAN, YANG MIN, HUANG DAMING, LU FANG, SUX HENGHUI

T D Lee Physics Laboratory, Fudan University, Physics Depai tment, Fudan university, National key Laboratory of Surface Physics, Fudan University

Received:1993-11-18 Revised:1994-03-06 Online:1995-12-31 Published:1995-12-31

摘要/Abstract

摘要： 研究了重掺硼分子束外延硅的载流子浓度对喇曼光谱线型的影响。以单声子态和准连续电子激发态之间的Fano相互作用理论为基础,对实验结果进行了讨论和拟合。由拟合得到的喇曼光谱的半峰宽、峰移、峰高和不对称因子等各参数之间的关系式,结合霍耳效应测量,得到了喇曼光谱的半峰宽Г同自由载流子浓度p之间的关系曲线为T=2.54p^0.408,其中Г,p分别是以cm^-1和10¹⁹cm^-3为单位。提供了用喇曼光谱测量重掺硼分子束外延材料自由载流子浓度的测量的定标曲线。

关键词: 重掺硼, 电子-声子相互作用, 喇曼光谱

Abstract: Heavily boron-doped silicon films grown by molecular beam epitaxy are investigated by Raman scattering. The lineshapes of Raman spectra are analyzed based on the theory of electron-phonon interaction. The relation between the linewidth and the carrier concentration is established experimentally,and the resul is consistent with the theoretical estimation found in previous literature.The relation provides a calibration for determining the carrier concentration through Raman scattering measurements.

Key words: Raman spectra, heavily boron-doped, electron-phonon interaction

王建宝, 袁健, 杨敏, 黄大鸣, 陆方, 孙恒慧. 重掺硼的分子束外延硅的喇曼光谱研究[J]. 应用科学学报, 1995, 13(4): 413-418.

WANG JIANBAO, YUAN JIAN, YANG MIN, HUANG DAMING, LU FANG, SUX HENGHUI. RAMAN SCATTERING INVESTIGATION OF HEAVILY BORON-DOPED SILICON FILMS GRCWN BY MOLECULAR BEAM EPITAXY[J]. Journal of Applied Sciences, 1995, 13(4): 413-418.