English

应用科学学报 ›› 1995, Vol. 13 ›› Issue (4): 483-487.

• 论文 • 上一篇    下一篇

含卤素源物质的金刚石薄膜淀积

曹传宝1, 彭定坤2, 孟广耀2   

  1. 1. 复旦大学;
    2. 中国科学技术大学
  • 收稿日期:1993-12-16 修回日期:1994-04-16 出版日期:1995-12-31 发布日期:1995-12-31

DIAMOND THIN FILMS DEPOSITION BY USING HALOGEN CONTAINING SOURCE MATERIALS

CAO CHUANBAO1, PENG DINGKUN2, MENG GUANGYAO2   

  1. 1. Fudan University;
    2. University of Science and Technology of China
  • Received:1993-12-16 Revised:1994-04-16 Online:1995-12-31 Published:1995-12-31

PDF

69

被引次数

1

摘要： 金刚石具有非常特殊的性质,它的硬度和弹性模量是已知材料中最高的,高导热性和高绝缘性兼备,有很高的电子/空穴迁移率.

关键词: 金刚石, 化学汽相淀积, 微波等离子体, 四氯化碳

Abstract: using CH4,CCl4 and H2 mixtures as source materials,We successfully synthe-sized diamond thin films at 570~580℃by the microwave plasma CVD process.The diamond thin films were characterized by the Raman spectrum,XRD,XPS and IR spectrum. The surface morphology of the films was observed with the Scanning Electron Mierosope. It was found that because CCl4 compound was introduced,the diamond nucleation density decreased.And when the concentration of CCl4 reached to 2.0%,no deposit but etehing pits could be formed.This was because of the existence of HCl in the system. The possible reason of substrate temperature decreasing in halogen containing system was discussed.

Key words: diamond, microwave plasma, CVD, CCl4