应用科学学报 ›› 1996, Vol. 14 ›› Issue (3): 318-324.

• 论文 • 上一篇    下一篇

微型NiFe条形薄膜元件在反磁化过程中的磁畴活动

余晋岳, 周勇, 宋柏泉, 叶伟春, 张宏   

  1. 上海交通大学
  • 收稿日期:1994-07-12 修回日期:1994-10-22 出版日期:1996-09-30 发布日期:1996-09-30
  • 作者简介:余晋岳:副教授,上海交通大学信息存储研究中心,上海 200030

THE DOMAIN ACTIVITIES DURING THE MAGNETIZATION REVERSAL PROCESS IN SMALL PERMALLOY FILM STRIPES

YU JINYUE, YE WEICHEN, SONG BAIQUAN, ZHOU YONG, ZHANG HONG   

  1. Shanghai Jiao Tong University
  • Received:1994-07-12 Revised:1994-10-22 Online:1996-09-30 Published:1996-09-30

摘要: 该文应用Bitter粉纹技术系统地观察,并从能量分析了微型40nm厚度NiFe薄膜条状元件在难轴方向反磁化过程中,磁畴结构的特性和变迁过程.研究表明,元件中的Barkhausen跳跃是畴壁合并、壁态转变和塞漏畴转变等不可逆磁畴结构变化过程的结果.

关键词: 薄膜元件, 反磁化, 磁畴, 畴壁

Abstract: By the Bitter pattern technique and the energy analysis method, we systematically studied the character and variations of domain structures during the magnetization reversal process along the hard-axis direction of a 40 nm NiFe film stripe. It shows that the Barkhausen jumps in the element are the result of the irreversible domain processes, involving domain wall mergence, closure domain transitions, and wall-state transitions.

Key words: thin film element, magnetization reversal, domain wall, magnetic domain