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应用科学学报 ›› 1996, Vol. 14 ›› Issue (4): 403-408.

• 论文 • 上一篇    下一篇

Co/Ti/Si三元薄膜固相反应外延CoSi2过程实验研究

吴卫军, 李炳宗, 邵凯, 房华   

  1. 复旦大学
  • 收稿日期:1995-02-18 修回日期:1995-05-03 出版日期:1996-12-31 发布日期:1996-12-31
  • 作者简介:吴卫军:工程师,复旦大学电子工程系,上海 200433
  • 基金资助:
    自然科学基金资助项目

THE EXPERIMENTAL STUDY ON GROWTH PROCESS OF CoSi2/Si HETERO-EPITAXY By Co/Ti/Si MULTILAYER SOLID STATE REACTION

WU WEIJUN, LI BINGZONG, SHAO KAI, FANG HUA   

  1. Fudan University
  • Received:1995-02-18 Revised:1995-05-03 Online:1996-12-31 Published:1996-12-31

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摘要： CoSi2是近年来被活跃研究的一种微电子导电薄膜材料.采用Co/Ti双层及TiN/Co/Ti多层结构,通过不同热处理工艺,可以形成CoSi2/Si异质外延结构.通过XRD、AES、RBS、四探针仪等测试,研究CoSi2外延生长时,Co、Ti、Si、O原子的互扩散过程,阐述了Ti在此过程中的重要作用.

关键词: 快速退火, 固相反应, 固相外延

Abstract: CoSi2 is being ivestigated intensively for microelectronics application recently. lit this paper a new method of growing an epitaxial CoSi2 film by the solid state reaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer is described.The variation of structure and sheet resistance of the film with thermal annealing temperature and time is studied. The kinetics and mechanism of the CoSi2/Si solid-phase epitaxy are discussed.

Key words: epitaxial growth, solid state reaction, rapid thermal annealing