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应用科学学报 ›› 1996, Vol. 14 ›› Issue (4): 409-414.

• 论文 • 上一篇    下一篇

双极晶体管储存寿命的1/f噪声预测方法

庄奕琪, 孙青   

  1. 西安电子科技大学
  • 收稿日期:1995-03-13 修回日期:1995-10-15 出版日期:1996-12-31 发布日期:1996-12-31
  • 作者简介:庄奕琪:副教授,西安电子科技大学微电子所,西安 710071

1/f NOISE AS A PREDICTION OF THE STORAGE LIFETIME FOR BIPOLAR TRANSISTORS

ZHUANG YIQI, SUN QING   

  1. Xidian University
  • Received:1995-03-13 Revised:1995-10-15 Online:1996-12-31 Published:1996-12-31

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摘要： 针对小功率双极晶体管进行的储存寿命试验和噪声测试结果表明,该器件在储存条件下的主要失效模式是电流放大系数β的退化.β随时间的减少量与其初始1/f噪声电流具有强相关性,近似是对数正比关系.由此提出了利用1/f噪声测量对双极晶体管储存寿命进行快速无损评价的新方法.该文给出了该方法的实验与理论依据以及预测模型.

关键词: 双极晶体管, 储存寿命, 退化, 1/f噪声

Abstract: It is Shown from storage lifetime test and low-frequency noise measurement for bipolar transistors that the degradation of current gain β occurs for most of the tested devices and is strongly correlated with the initial 1/f noise in thsse devices, So the 1/f noise measurement can be used as a fast and non-destructive tool to evaluate the storage lifetime of the devices. The experimental and theoretical evidences as well as a Prediction model for the new method are presented in this paper.

Key words: 1/f noise, storage lifetime, bipolar transistor, degradation