English

应用科学学报 ›› 1996, Vol. 14 ›› Issue (4): 415-421.

• 论文 • 上一篇    下一篇

低温超高速BiCMOS数字电路的延迟特性分析

吴金1,2, 魏同立1,2   

  1. 1. 东南大学;
    2. 复旦大学专用集成电路与系统国家重点实验室
  • 收稿日期:1995-04-19 修回日期:1995-06-26 出版日期:1996-12-31 发布日期:1996-12-31
  • 作者简介:吴金:讲师,东南大学微电子中心,南京 210096
  • 基金资助:
    国家自然科学基金,博士点基金资助项目

DELAYTIME ANALYSIS FOR SUPER HIGH SPEED BICMOS DIGITAL CIRCUITS IN LOW TEMPERATVRE

Wu JIN1,2, WEI TONGLI1,2   

  1. Southeast University
  • Received:1995-04-19 Revised:1995-06-26 Online:1996-12-31 Published:1996-12-31

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摘要： 在常规BiCMOS技术基础上,该文充分考虑了低温下MOS电流驱动能力增强、双极器件增益与频率性能退化、PN结正向导通电压增加和结电容减小等因素的影响,并由此建立起统一的低温BiCMOS数字电路延迟时间的非线性解析分析模型,所得到的有关结论对低温超高速BiCMOS电路的优化设计有现实的指导意义.

关键词: 延迟时间, BiCMOS, 低温

Abstract: BiCMOS technology.has a most important effect in realizing super high speed circuits systems. On the basis of the conventional BiOMOS theory, a unified non-linear analytical delaytime model for BiCMOS digital circuits is presented by fully considering some low temperature effects, such as current driving capability enhancement of MOSFET, current gain and cutoff frequency decadence, forword turn on voltage of emitter-base junction increment of BJT,and the junction capacitance reduction of the system. The conculsions obtained have important significance in the optimization design for low temperatures super high speed BiCMOS circuits.

Key words: BiCMOS, low temperature, delaytime