Te溶液生长半磁半导体Cd1-xMnxTe的光学和电学性质研究

应用科学学报 ›› 1997, Vol. 15 ›› Issue (1): 107-111.

Te溶液生长半磁半导体Cd_1-xMn_xTe的光学和电学性质研究

莫要武, 吴汶海

上海大学, 嘉定校区

收稿日期:1995-02-18 修回日期:1995-05-18 出版日期:1997-03-31 发布日期:1997-03-31
作者简介:莫要武:讲师,上海大学嘉定校区材料科学系,上海 201800

INVESTIGATION OF THE PROPERTIES OF SMSC Cd_1-xMn_xTe CRYSTAL FILMS GROWNRFOM Te-RICH SOLUTION

MO YAOWU, WU WENHAI

Jiading Campus, Shanghai University, Jiading, Shanghai, 201800

Received:1995-02-18 Revised:1995-05-18 Online:1997-03-31 Published:1997-03-31

摘要/Abstract

摘要： 测量了Te溶液生长半磁半导体(SMSC) Cd_1-xMn_xTe的导电类型、电阻率、霍尔迁移率和光致发光(PL).测定结果表明,Te溶液生长Cd_1-xMn_xTe晶体质量和稳定性均优于布里奇曼长晶,根据正四面体配位晶场中Mn²⁺3d (⁴T₁)能级出现在Cd_1-xMn_xTe禁带中的观点,分析了在0.85~1.5μm范围内红外透射光谱上存在吸收边的原因。

关键词: 碲锰镉, 光致发光, 半磁半导体, 溶液生长

Abstract: The receptivity, conductive type, Hall mobility and photoluminescence (PL) of semimagnetic semiconductor (SMSC) Cd_1-xMn_xTe crystal films grown from Te-ricb solution were measured. All these results showed that the quality and stability of crystal films grown were better than Cd_1-xMn_xTe bulk crystal grown by Bridgeman technique. The cause of absorptive edge existing within 0.85~1.5 μm range in infrared transmittance spectrum was investigated based on the viewpoint that the first excited state (⁴T₁) of Mn²⁺3d in tetrahedral crystal field appeared in the bandgap of Cd_1-xMn_xTe crystal.

Key words: Semimagnetic semiconductor, CdMnTe, Solution growth, Pbotolu minescence

莫要武, 吴汶海. Te溶液生长半磁半导体Cd_1-xMn_xTe的光学和电学性质研究[J]. 应用科学学报, 1997, 15(1): 107-111.

MO YAOWU, WU WENHAI. INVESTIGATION OF THE PROPERTIES OF SMSC Cd_1-xMn_xTe CRYSTAL FILMS GROWNRFOM Te-RICH SOLUTION[J]. Journal of Applied Sciences, 1997, 15(1): 107-111.

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