M/a-Si:H肖特基势垒参数的测量

应用科学学报 ›› 1997, Vol. 15 ›› Issue (2): 187-192.

M/a-Si:H肖特基势垒参数的测量

张治国¹, 宿昌厚²

1. 内蒙古工业大学;
2. 北京工业大学

收稿日期:1995-04-06 修回日期:1996-06-09 出版日期:1997-06-30 发布日期:1997-06-30
作者简介:张治国:副教授,内蒙古工业大学电力学院自动化系,呼和浩特 010080

THE EXPERIMENTAL STUDY OF M/A-SI:H SCHOTTKEY BARRIER PARAMETERS

ZHANG ZHIGUO¹, SU CHANGHOU²

1. Department of Automation, Electric Power College Inner Mongoulia Polytechnic University, hohhot, 010080;
2. Beijing Polytechnic University Beijing, 100022

Received:1995-04-06 Revised:1996-06-09 Online:1997-06-30 Published:1997-06-30

摘要/Abstract

摘要： 介绍在中性区光电导调制下实现用高频C-V仪测量M/a-Si:H肖特基势垒参数的方法,把所测结果与其他方法测量值作了比较.对Al/a-Si:H势垒异常现象也进行了描述.

关键词: M/a-Si:H势垒, C-V特性, 光电导调制

Abstract: An experiment technique is introduced to modulate the neutral bulk region of M/a-Si:H system with light, and to measure the barrier characteristics of M/a-Si:H junction with high frequency C-V meter. The results obtained and available data from literatures arc compared. With much emphasis, the unusual phenomenon in Al/a-Si:H structure is described.

Key words: M/a-Si:H barrier, photoconductive modulation, C-V characteristics

张治国, 宿昌厚. M/a-Si:H肖特基势垒参数的测量[J]. 应用科学学报, 1997, 15(2): 187-192.

ZHANG ZHIGUO, SU CHANGHOU. THE EXPERIMENTAL STUDY OF M/A-SI:H SCHOTTKEY BARRIER PARAMETERS[J]. Journal of Applied Sciences, 1997, 15(2): 187-192.