应用科学学报 ›› 2000, Vol. 18 ›› Issue (1): 27-31.

• 论文 • 上一篇    下一篇

In1-xAlxAs/GaAs一维超点阵结构的X射线衍射和Raman散射研究

杨传铮   

  1. 上海大学物理系, 上海 200436
  • 收稿日期:1998-10-15 修回日期:1999-02-01 出版日期:2000-03-31 发布日期:2000-03-31
  • 作者简介:杨传铮(1939-),男(侗族),湖南新晃人,副研究员.

Research on One-dimensional Superlattice Structure of In1-xAlxAs/GaAs by X-ray Diffraction and Raman Scattering

YANG Chuan-zheng   

  1. Department of Physics, Shanghai University, Shanghai 200436, China
  • Received:1998-10-15 Revised:1999-02-01 Online:2000-03-31 Published:2000-03-31

摘要: 用同步辐射和CuKα X射线衍射方法对In1-xAlxAs/GaAs一维超点阵结构进行对比式研究.从低角衍射数据求得超点阵的周期Λ,由GaAs(002)附近衍射数据求得各结构参数.对两种光源的衍射结果进行了分析和比较.解释了该超点阵的Raman散射谱,发现在Ga1-xAlxAs混晶谱中不存在的275cm-1峰.

关键词: X射线衍射, 一维超点阵, Raman散射

Abstract: One-dimensional superlattice structure of In1-x AlxAs/GaAs has been comparatively researched by X-ray diffraction method from synchrotron radiation and CuKα radiation. The superlattice structural period Λ,and refraction index n are calculated from low angle X-ray diffraction data. The superlattice structural parameters have been determined from high angle X-ray diffraction data. The results from two X-ray sources have been compared and discussed. Raman scattering spectrum of this one-dimensional superlattice has been interpreted and 275cm-1 peak which is absent in Ga1-x AlxAs/GaAs system has been found.

Key words: one-dimensional superlattice, X-ray diffraction, Raman scattering

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