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应用科学学报 ›› 2001, Vol. 19 ›› Issue (3): 261-264.

• 论文 • 上一篇    下一篇

(112)面CdTe/Cd1-yZnyTe,Hg1-xCdxTe/CdTe和CdTe/GaAs异质结的方向倾斜

刘义族1, 于福聚2   

  1. 1. 天津师范大学物理系, 天津 300074;
    2. 中国科学院上海技术物理研究所, 上海 200083
  • 收稿日期:2000-07-18 修回日期:2001-01-08 出版日期:2001-09-30 发布日期:2001-09-30
  • 作者简介:刘义族(1942-),男,天津市人,副教授.

Oriental Shift at CdTe/Cd1-y ZnyTe, Hg1-x CdxTe/CdTe and CdTe/GaAs Heterojunctions Grown on (112) plane

LIU Yi-zu1, YU Fu-ju2   

  1. 1. Physics department, Tianjin Normal University, Tianjin 300074, China;
    2. Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received:2000-07-18 Revised:2001-01-08 Online:2001-09-30 Published:2001-09-30

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摘要： 用X射线双晶衍射(XDCD)法测得分子束外延(MBE)法生长的CdTe/Cd0.959Zn0.041Te(112)B异质结的倾斜角为0.2185°,而且朝[111]晶体学方向倾斜.为了获得较精确的倾斜角值,绘制了外延层和衬底衍射角的差值Δθ与绕样品表面法线旋转的角度φ之间的准正弦函数.为高分辨率透射电子显微镜(HRTEM)分析制备了MBE法生长的Hg0.535Cd0.465Te/CdTe/GaAs(112)B多层异质结的横截面薄膜.CdTe/GaAs异质结的HRTEM明场象表明CdTe(112)缓冲层相对于GaAs(112)衬底朝[111]方向倾斜约3°,并且在Hg0.535Cd0.465Te/CdTe异质结,Hg0.535Cd0.465Te(112)外延膜相对于CdTe(112)缓冲层在[111]方向,即[111]的反方向倾斜约1°.也分析了Hg0.535Cd0.465Te/CdTe/GaAs多层膜之间的倾斜角关系.

关键词: 分子束外延, 异质结, 倾斜角

Abstract: A tilt in the[111] crystallographic direction, and a tilt angle of 0.21850° were determined by XDRD (X-ray double crystal diffraction) in a CdTe/Cd 0.959 Zn 0.041 Te (112) B heterojunction grown by means of MBE (molecular beam epitaxy), and a quasi-Sine function between the rotation angle Δφ around sample surface normal and the diffraction angle difference Δθ was drawn in order to obtain optimal data. A special oriented cross-section of Hg0.535 Cd0.465 Te/CdTe/GaAs (112) B multilayer grown by MBE was prepared for HRTEM (high resolution transmission electron microscopy) determination, and the HRTEM images show that the buffer layer CdTe (112) relative to the substrate GaAs (112) is inclined by about 3° towards the[111] orientation at the CdTe/GaAs heterojunction, and that the epilayer Hg0.535 Cd0.465 Te (112) relative to the buffer layer CdTe (112) is inclined by about 1° towards the[111] orientation, in the opposite direction of[111] at the Hg0.535 Cd0.465 Te/CdTe heterojunction. The relationship of the tilt angles at the Hg0.535 Cd0.465 Te/CdTe/GaAs multilayer was also analyzed.

Key words: molecular beam epitaxy, heterojunctions, tilt angles

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