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应用科学学报 ›› 2002, Vol. 20 ›› Issue (2): 150-152.

• 论文 • 上一篇    下一篇

PbSrTiO3铁电薄膜隧道结的I-V特性

陈红卫1, 缪江平1, 翟亚1, 吴宗汉1, 孙承休2, 孙平2   

  1. 1. 东南大学物理系, 江苏南京 210096;
    2. 东南大学电子工程系, 江苏南京 210096
  • 收稿日期:2001-03-23 修回日期:2001-09-29 出版日期:2002-06-30 发布日期:2002-06-30
  • 作者简介:陈红卫(1975-),女,江苏南通人,博士生.
  • 基金资助:
    国家自然科学基金资助项目(59977002)

The I-V Character of Tunnel Junction Constituted by Ferroelectric Thin Film PbSrTiO3

CHEN Hong-wei1, MIAO Jiang-ping1, ZHAI Ya1, WU Zong-han1, SUN Cheng-xiu2, SUN Ping2   

  1. 1. Department of physics, Southeast University, Nanjing 210096, China;
    2. Department of Electronic Engineering, Southeast University, Nanjing 210096, China
  • Received:2001-03-23 Revised:2001-09-29 Online:2002-06-30 Published:2002-06-30

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摘要： 报道了对用射频磁控溅射法制备的钛酸锶铅(PST)薄膜隧道结进行的I-V特性的测量,发现有负阻现象,并首次用表面等离激元和极化波理论对此作了解释.

关键词: 铁电薄膜, 表面等离极化激元, 极化波, 负阻

Abstract: The ferroelectric thin film PbSrTiO 3 is a typical ferroelectric film with wide application. In this paper, the measurement of the I-V characteristics of this thin ferroelectric system, which was prepared by RF magnetron spattering method is reported. We found, for the first time, the negative resistance phenomenon, and interpreted it through the application of the theory of surface plasmon polariton (SPP) and polarized-wave.

Key words: ferroelectric thin film, surface plasmon polariton (SPP), polarized-wave, negative resistance

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