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应用科学学报 ›› 2006, Vol. 24 ›› Issue (6): 577-581.

• 论文 • 上一篇    下一篇

选择离子注入GaAs MESFET的旁栅特性研究

陆生礼, 丁勇, 时龙兴   

  1. 东南大学国家专用集成电路系统工程技术研究中心, 江苏南京 210096
  • 收稿日期:2005-07-20 修回日期:2006-09-12 出版日期:2006-11-30 发布日期:2006-11-30
  • 作者简介:陆生礼,教授,研究方向:半导体器件、VLSI设计等,E-mail:lsb@seu.edu.cn;时龙兴,教授,博导,研究方向:VLSI设计、视频处理等,E-mail:lxshi@seu.edu.cn

Sidegating Effect of GaAs MESFET with Planar Selective Ion Implantation

LU Sheng-li, DING Yong, SHI Long-xing   

  1. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
  • Received:2005-07-20 Revised:2006-09-12 Online:2006-11-30 Published:2006-11-30

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摘要： 主要研究了平面选择离子注入隔离工艺条件下的GaAs MESFET的旁栅效应,分别设计了不同的测试方法来分析旁栅效应的多种特性,并从理论上对测试结果进行了解释.认为这些特性都与沟道-衬底(C-S)结的特性和高场下衬底深能级EL2的碰撞电离有关.

关键词: 特性, 沟道-衬底结, 旁栅效应, EL2碰撞电离

Abstract: This letter studies the sidegating effect of GaAs MESFET under the same processing technology of planar selective ion implantation.In the experiments, characteristics of the sidegating effect were analyzed.The observations strongly depend upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL2 under high field.The obtained results are of particular pertinence to the design of low-noise and high integrated GaAs IC' s.

Key words: characteristic, sidegating effect, impact ionization of EL2, channel-substrate (C-S) junction

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