English

应用科学学报 ›› 1985, Vol. 3 ›› Issue (2): 184-185.

• 论文 • 上一篇    下一篇

78K红外吸收法测定硅中氧含量

李月珍, 沈金媛, 任宁, 王其闵   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1982-09-01 修回日期:1984-04-25 出版日期:1985-06-30 发布日期:1985-06-30

78 K INFRARED ABSORPTION METHOD FOR MEASURING THE OXYGEN CONTENT IN SILICON

LI YUEZHEN, SHEN JINYUAN, REN NING, WANG QIMIN   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1982-09-01 Revised:1984-04-25 Online:1985-06-30 Published:1985-06-30

PDF

80

被引次数

2

摘要： 硅中氧含量的测定是评价硅单晶质量的重要参数之一.用外红吸收法测定硅单晶中的氧含量已有许多报道[1~5].我们曾建立了300K 9μm红外吸收法测氧标定曲线[6],低温可提高检测灵敏度[7~10],因此本工作主要是建立较精确的78K红外测氧标定曲线.

Abstract: A more accurate calibration curve at 78K for measuring the oxygen content in silicon single crystals has been established by the infrared absorption difference method. The resulting formula is N0=2.6α ppmA, or N0=1.3×1017α atoms/cm3 where α represents the IR absorption coefficient.