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应用科学学报 ›› 1989, Vol. 7 ›› Issue (4): 367-370.

• 论文 • 上一篇    下一篇

热氮化SiO2膜的抗辐射特性

商陆民, 张家慰, 简耀光   

  1. 南京工学院
  • 收稿日期:1986-07-17 修回日期:1986-12-27 出版日期:1989-12-31 发布日期:1989-12-31

RADIATION HARD CHARACTERISTIC OF NITRIDED OXIDES ON SILICON

SHANG LUMING, ZHANG JIAWEI, JIAN YAOGUANG   

  1. Nanking College of Technology
  • Received:1986-07-17 Revised:1986-12-27 Online:1989-12-31 Published:1989-12-31

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摘要： 离子注入、电子束和离子束曝光以及电子束蒸发等技术已用于超大规模集成电路生产中.但是,这些新工艺引入了高能粒子辐射,给MOS集成电路的概介质带来了新的缺陷.因此,寻找抗辐射的栅介质是令人感兴趣的课题.

Abstract: The effects of 60Co gamma radiation on Al-Nitrided SiO2-Si system and the electron beam (5 kev) on the Si LW Auger spectra of nitrided SiO2 films have been observed. The results show that the fixed charge density and the surface state density for the nitrided film appear to be less sensitive to gamma radiation than those for the SiO2 film and the electron beam effect is almost neligible, because of Si-N bonds in the nitrided film.