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应用科学学报 ›› 1989, Vol. 7 ›› Issue (2): 179-181.

• 论文 • 上一篇    下一篇

重掺砷衬底氧本征吸杂能力的探讨

谭淞生, 朱德光, 王自筠   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1986-12-03 修回日期:1987-08-15 出版日期:1989-06-30 发布日期:1989-06-30

INTRINSIC GETTERING EFFECTIVENESS IN HEAVILY ARSENIC-DOPED SILICON

TAN SONGSHENG, ZHU DEGUANG, WANG ZIYUN   

  1. Shanghai Institute of Metallurgy
  • Received:1986-12-03 Revised:1987-08-15 Online:1989-06-30 Published:1989-06-30

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摘要： 虽则集成电路级单晶衬底的氧本征吸杂工艺已作过广泛的探讨,重掺衬底的氧本征吸杂研究还仅是近年来才开始的[1~5].与体材料相比,采用P/P+和n/n+外延材料加工MOS电路有很多优点[6].

Abstract: The intrinsic gettering effectiveness in heavily arsenic-doped silicon has been investigated. It has been shown that the quality of epitaxial layers is improved by the intrinsic gettering process. The generation lifetime has increased by more than 15 times, and the diode reverse leakage current has been improved by two to three orders of magnitude.
Furthermore,the results indicate that the intrinsic gettering effect can perform in a longer distance than the extrinsic gettering effect by heavy boron diffusion.