聚酰亚胺薄膜电容栅FET湿度传感器的研制

应用科学学报 ›› 1996, Vol. 14 ›› Issue (1): 86-90.

聚酰亚胺薄膜电容栅FET湿度传感器的研制

骆如枋, 陆德仁, 陆玉萍

中国科学院上海冶金研究所

收稿日期:1994-04-18 修回日期:1995-03-10 出版日期:1996-03-31 发布日期:1996-03-31
作者简介:骆如枋:高工,中国科学院上海冶金研究所,上海 200050
基金资助:
传感器联合开放国家实验室资助项目

DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR

LUO RUFANG, LU DEREN, LU YUPING

Shanghai Institute of Metallurgy, Academia Sinica

Received:1994-04-18 Revised:1995-03-10 Online:1996-03-31 Published:1996-03-31

摘要/Abstract

摘要： 一种聚酰亚胺(PI)薄膜电容栅FET微型湿度传感器已经初步研制成功.这是一个n沟道增强型器件,具有曲折栅结构;沟道长约10μm,宽>8000μm;栅区绝缘层厚约300nm (SiO₂+Si₃N₄);一个Au-PI-Al纵向湿敏电容覆植于绝缘栅上.本文报道该PI-HUMFET的结构设计、工作原理和主要性能并对某些有关问题进行了初步讨论.

关键词: 湿度, 聚酰亚胺, 湿度传感器, FET

Abstract: A micro HUMFET with a polyimide(PI) film humisensing capaoitor lying on the insulating gate was developed. It is an n-channel enhancement mode device with a meandering gage of 10μm in channel length and >8000μm in channel width and with a double insulating gate(SiO₂+Si₃N₄) of about 30nm.The hnmi-sensing capacitor lying on the insulating gate is an Au-PI-Al capacitor.
The structure design and operation principle of the PI-HUMFET were described.The measuring result of the characteristics of the device was reported and some relative problems were discussed.

Key words: humidity sensor, humidity, polyimide, FET

骆如枋, 陆德仁, 陆玉萍. 聚酰亚胺薄膜电容栅FET湿度传感器的研制[J]. 应用科学学报, 1996, 14(1): 86-90.

LUO RUFANG, LU DEREN, LU YUPING. DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR[J]. Journal of Applied Sciences, 1996, 14(1): 86-90.

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