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应用科学学报 ›› 1996, Vol. 14 ›› Issue (1): 78-85.

• 论文 • 上一篇    下一篇

Te溶液生长半磁半导体Cd1-xMnxTe时界面稳定性的讨论

莫要武, 吴汶海   

  1. 上海大学, 嘉定校区
  • 收稿日期:1993-08-30 修回日期:1995-01-17 出版日期:1996-03-31 发布日期:1996-03-31
  • 作者简介:莫要武:讲师,上海大学,嘉定校区,材料系,上海 201800

THE INyESTIGATION OF INTERFACIAL STABILITY DURING Te SOLUTION GROWTH OF SMSC Cd1-xMnxTe

MO YAOWU, WU WENHAI   

  1. Shanghai University, Jiading Campus
  • Received:1993-08-30 Revised:1995-01-17 Online:1996-03-31 Published:1996-03-31

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摘要： 用Mullins和Sekerka的线性动力学理论定性探讨了Te溶液生长半磁半导体Cd1-xMnxTe时固-液界面的稳定性.并在自行设计的旋转式液相外延装置中,用CdTe作籽晶,利用失稳小平面的长厚,富Te溶液生长了Cd1-xMnxTe晶膜,其面积为0.5cm2,厚度~0.4mm.分析了界面能各向异性的影响及晶膜表面形貌呈波纹状的原因,最后探讨了获得稳定液相外延的条件.

关键词: 溶液生长, 半磁半导体, 界面, 碲锰镉, 稳定性

Abstract: Cd1-xMnxTe crystal films were grown in the OdTe seed crystal from Te solution,using the revolving liquid phase epitaxial(LPE) configuration designed by us. The crystal film, typically~0.4mm thick and 0.5cm2 in area, stood at an angel wish the seed crystal plane.The stability of the interface between the solution and solid phases during the growth process was studied using the linear stability analysis proposed by Mullins and Sekerka.The influences of heterogeneity in interfacial energy and causes of forming the ripple morphology on the crystal film surface were analyzed. Oonditions for the stable liquid phase epitaxy were probed.

Key words: solution growth, semimagnetic semiconductor, OdMnTe, interface stablity