用10.6μm红外激光辐照在硅中掺入铝和锑制备大面积p-n结的研究

应用科学学报 ›› 1992, Vol. 10 ›› Issue (3): 241-246.

用10.6μm红外激光辐照在硅中掺入铝和锑制备大面积p-n结的研究

钟涛, 林理彬, 范安辅

四川大学

收稿日期:1990-09-07 修回日期:1991-04-10 出版日期:1992-09-30 发布日期:1992-09-30

INVESTIGATION ON PREPARATION OF p-n JUNCTION OF LARGE AREA BY IRRADIATION DOPING AI OR Sb IN Si USING 10.6 μm INFRA RED LASER

ZHONG TAO, LIN LIBIN, PAN ANFU

Sichuan University

Received:1990-09-07 Revised:1991-04-10 Online:1992-09-30 Published:1992-09-30

摘要/Abstract

摘要： 用脉冲高能红外激光(波长10.6μm),在N型和P型单晶硅中分别掺入铝和锑,制备了最大面积可达φ20mm的p-n结.激光掺杂存在一个阈值能量密度.掺杂浓度和深度的分布与预热温度和杂质镀层厚度有关.并对p-n结的伏安特性,扩散层薄层电阻和光生电压进行了测试.

关键词: 激光掺杂, 预热, 阈值能量

Abstract: The preparation of p-n junctions of large area (maximum area φ20 mm) by irradiat ion doping Al and Sb in N and P type crystals Si respectively using high-energy pulse infra-red laser (wavelength=10.6 μm) is carried out. It is found that there is a threshold energy density in laser doping, and distributions of dopant density an d depth have relation to preheat temperature and plating layer thickness of the impurities. Volt-ampere characteristics, thin-layer resistance and photvoltage of the p-n junction are measured.

Key words: laser doping, threshold energy, preheat

钟涛, 林理彬, 范安辅. 用10.6μm红外激光辐照在硅中掺入铝和锑制备大面积p-n结的研究[J]. 应用科学学报, 1992, 10(3): 241-246.

ZHONG TAO, LIN LIBIN, PAN ANFU. INVESTIGATION ON PREPARATION OF p-n JUNCTION OF LARGE AREA BY IRRADIATION DOPING AI OR Sb IN Si USING 10.6 μm INFRA RED LASER[J]. Journal of Applied Sciences, 1992, 10(3): 241-246.