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应用科学学报 ›› 1985, Vol. 3 ›› Issue (2): 161-168.

• 论文 • 上一篇    下一篇

砷化镓双栅肖特基势垒栅场效应晶体管微波参数测试研究

杨新民1, 王渭源1, 王文骐2   

  1. 1. 中国科学院上海冶金研究所;
    2. 上海科技大学分部
  • 收稿日期:1982-02-08 修回日期:1982-07-27 出版日期:1985-06-30 发布日期:1985-06-30

MICROWAVE PARAMETER MEASUREMENTS FOR GaAs DUAL-GATE MESFET

YANG XINMIN1, WANG WEIYUAN1, WANG WENQI2   

  1. 1. Shanghai Institute of Metallurgy, Academia Sinica;
    2. Shanghai University of Science and Technology, Branch
  • Received:1982-02-08 Revised:1982-07-27 Online:1985-06-30 Published:1985-06-30

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60

被引次数

3

摘要： 本文采用中频衰减法和微带测试电路.测量了超高频应用的低噪声GaAs双栅肖特基势垒栅场效应晶体管(以下简称GaAS双栅MESFET)的最小噪声系数NFmin、相应功率增益Ga和增益控制量GR,借助网络分析仪测量了S参数.测试表明,1GHz下最佳噪声系数NF0为0.8dB,而Ga、GR可达11.5dB和48dB,在0.5~2GHz频带内,器件处于稳定工作状态.

Abstract: The microwave parameters minimum noise figure NFmin associated gain Ga and gain reduction GR of a low noise GaAs dual-gate MESFET for UHF applications were measured by means of the mid-frequency attenuation method in microstrip test circuits. The S parameters were measured by means of network analyser. From the experimental data, the best noise figure NF0 of 0.8dB was obtained. The Ga and GR amounted to 11.5dB and 48dB, respectively. It was shown by S parameters that the dual-gate MESFET was stable over 0.5-2GHz.