应用科学学报 ›› 1983, Vol. 1 ›› Issue (1): 9-16.

• 论文 • 上一篇    下一篇

砷化镓中某些深能级陷阱间的平衡

邹元燨   

  1. 中国科学院上海冶金研究所
  • 收稿日期:1981-09-22 出版日期:1983-03-31 发布日期:1983-03-31

EQUILIBRIA AMONG CERTAIN DEEP-LEVEL TRAPS IN GaAs

ZOU YUANXI   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1981-09-22 Online:1983-03-31 Published:1983-03-31

摘要: 介绍了作者对GaAs中四个深能级缺陷间的平衡所作的计算,并对这些缺陷的本性作出推测,对文献中的一些不同看法以及不同材料中这些能级数量上的差异作了讨论.最后对以前文章中的某些论点作了修改和补充.

Abstract: A proportionality relationship has recently been found to exist between the density of the EL2 electron trap in VPE GaAs and the As/Ga ratio in the gas phase, and also between the ratio[C]/[EL2] and n300K for VPE GaAs grown in N2, where C is a new electron trap found by Ozeki et al. These relationships have led us to the supposition that C and EL2 might be (VGa) 2 and AsGaVGaVAs respectively, and the equilibrium among AsAs (VGa) 2 and AgGaVGaVAs has been named as the C-EL2 or C-A equilibrium.