Journal of Applied Sciences ›› 1983, Vol. 1 ›› Issue (1): 9-16.

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EQUILIBRIA AMONG CERTAIN DEEP-LEVEL TRAPS IN GaAs

ZOU YUANXI   

  1. Shanghai Institute of Metallurgy, Academia Sinica
  • Received:1981-09-22 Online:1983-03-31 Published:1983-03-31

Abstract: A proportionality relationship has recently been found to exist between the density of the EL2 electron trap in VPE GaAs and the As/Ga ratio in the gas phase, and also between the ratio[C]/[EL2] and n300K for VPE GaAs grown in N2, where C is a new electron trap found by Ozeki et al. These relationships have led us to the supposition that C and EL2 might be (VGa) 2 and AsGaVGaVAs respectively, and the equilibrium among AsAs (VGa) 2 and AgGaVGaVAs has been named as the C-EL2 or C-A equilibrium.