Abstract: The PbO₂/MnO₂ semiconducting thin film is deposited by RF bias sputtering, doping PbO₂ with MnO₂. This film, on account of its good properties at high and low temperatures, can be used to fabricate large capacity film capacitor TLMM. The MnO₂ thin film, which can be employed to manufacture the multiplier phototube, is sputter-deposited directly from powder MnO₂, its composition and chemical aspect approaching standard MnO₂. ESCA and AES techniques are used to monitor the ratio of PbO₂/MnO₂ and the composition of manganese oxide of the semiconducting thin film. In this way, the sputtering parameters are determined.