Abstract: This paper describes a control system for MOCVD by the use of a microcomputer. The MOCVD is a metal-organic chemical vapor deposition (MOCVD) system specifically designed for developing epitaxial layers of gallium-arsenide and other Ⅲ-Ⅴ/Ⅱ-Ⅵ semiconductor compound materials. It is also useful for the investigation of super-lattice.
The control system consists of a microcomputer interface, a mass flow control for each gas, a temperature control for the baths for each metal-organic source, a temperature control for RF-heated susceptor, a gas switching manifold, a gas panel and so on.
The accuracy of the temperature control for the RF-heated susceptor is 0.05%, The error of the temperature control for metal-organic baths is about-15±0.01℃.
The fully automated process control is achieved in a safe, accurate manner by the use of the control system based on a microcomputer under any adverse circumstance.