中文

Journal of Applied Sciences ›› 1990, Vol. 8 ›› Issue (3): 207-212.

• Articles • Previous Articles     Next Articles

INVESTIGATION OF DEFECTS INDUCED BY HIGH FREQUENCY IN PECVD PASSIVATION FILM

LI DANZI1, ZHAO LENGCHU2, LAO FENGYING3   

  1. 1. The Branch School of Shanghai University of Science and Technology;
    2. Shanghai University of Science and Technology;
    3. Shanghai No, 17 Radio Factory
  • Received:1988-01-22 Revised:1988-08-19 Online:1990-09-30 Published:1990-09-30

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Abstract: On the basis of experiments and theoretical analysis, the paper presents two kinds of defect as induced by high frequency in the PEOVD passivation films by using the parallel plate mode plasma equipment. One is the positively charged centre. It arises from the break of Si-O and Si-Si bands. The other one is the negatively charged centre which arises from the existence of ionogens, mainly (Si-H)Nx. Both of them can be eliminated by annealing at some proper conditions.