Abstract: Using the prolysis of SiH₄, the epitaxial growth of silicon films on yttria-stabilized, cubic zirconia substrate has been investigated. The results indicate that high temperature annealing prior to epitaxial growth is necessary ior obtaining single crystalline silicon films. The annealing temperature of predeposition is above 1250℃ for 120 min. Using TEM and AES to analyze the films, it is shown that the single crystalline silicon films are good and have high resistivity.