Abstract: In this paper, the electrical characteristics, especially the ohmic contact and electromigration properties of the Al-Ti/W-PtSi system were studied. The surface components, interface profile and the variation of surface morphology with the annealing treatment conditions of this system were observed by AES and SEM methods. The activation energy of the electromigration process was also presented. Surther, We investigated the application effects of the system Al-Ti/W-PtSi for SIT devices and 10, and got excellent effects. Finally, the action mechanism concerned with these effects were discussed.

Key words: specific contact resistance, surface morphology, anti-electromigration properies