Abstract: The preparation of p-n junctions of large area (maximum area φ20 mm) by irradiat ion doping Al and Sb in N and P type crystals Si respectively using high-energy pulse infra-red laser (wavelength=10.6 μm) is carried out. It is found that there is a threshold energy density in laser doping, and distributions of dopant density an d depth have relation to preheat temperature and plating layer thickness of the impurities. Volt-ampere characteristics, thin-layer resistance and photvoltage of the p-n junction are measured.

Key words: laser doping, threshold energy, preheat