Journal of Applied Sciences ›› 1993, Vol. 11 ›› Issue (3): 248-252.

• Articles • Previous Articles     Next Articles

TEMPERATURE DEPENDENCE OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF BIPOLAR TRANSISTORS

ZHENG JIANG, WANG YAN, HUANG QIN, WU JIN, WEI TONGLI   

  1. Southeast University
  • Received:1991-07-08 Online:1993-09-30 Published:1993-09-30

Abstract: In this paper, the relation between the effective doping distribution NEeff and the doping concentration NE in the emitter of silicon bipolar transistors at different temperatures is studied theoretically. The results indicate that NEeff increases as NE rises at room and high temperatures; however, NEeff will decrease as NE rises at low temperatures; and NEeff shows no relation to NE at a particular temperature. These results will provide the design foundation of bipolar transistors for low temperature operation.

Key words: temperature, transistor, effective doping distribution