双极型晶体管发射区有效杂质分布的温度关系

Abstract

Abstract: In this paper, the relation between the effective doping distribution N_Eeff and the doping concentration N_E in the emitter of silicon bipolar transistors at different temperatures is studied theoretically. The results indicate that N_Eeff increases as N_E rises at room and high temperatures; however, N_Eeff will decrease as N_E rises at low temperatures; and N_Eeff shows no relation to N_E at a particular temperature. These results will provide the design foundation of bipolar transistors for low temperature operation.

Key words: temperature, transistor, effective doping distribution

ZHENG JIANG, WANG YAN, HUANG QIN, WU JIN, WEI TONGLI. TEMPERATURE DEPENDENCE OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF BIPOLAR TRANSISTORS[J]. Journal of Applied Sciences, 1993, 11(3): 248-252.

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TEMPERATURE DEPENDENCE OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF BIPOLAR TRANSISTORS

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