Journal of Applied Sciences ›› 1993, Vol. 11 ›› Issue (3): 253-257.
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CHEN CUNLI1, SONG HAIZHI1, HUA WENYU2
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Abstract: A TiNxOy/TiSi2 bilayer structure is formed simultaneously for Ti film on Si by rapid thermal annealing at 900℃ for 15s in highly pure NH3. The effectiveness of TiNxOy as a diffusion barrier layer for Al has been studied. Eesults show that the Al/TiNxOy/TiSi2/Si contact system has good thermal stability, when Bintered in N2, up to 550℃ for 30min.
Key words: diffusion barrier, rapid thermal annealing, titanium silicide
CHEN CUNLI, SONG HAIZHI, HUA WENYU. THERMAL STABILITY OF SIMULTANEOUSLY FORMED TiNxOy/TiSi2 FOR SHALLOW JUNCTION DEVICE APPLICATIONS[J]. Journal of Applied Sciences, 1993, 11(3): 253-257.
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https://www.jas.shu.edu.cn/EN/Y1993/V11/I3/253
