Abstract: Cd_1-xMn_xTe crystal films were grown in the OdTe seed crystal from Te solution,using the revolving liquid phase epitaxial(LPE) configuration designed by us. The crystal film, typically~0.4mm thick and 0.5cm² in area, stood at an angel wish the seed crystal plane.The stability of the interface between the solution and solid phases during the growth process was studied using the linear stability analysis proposed by Mullins and Sekerka.The influences of heterogeneity in interfacial energy and causes of forming the ripple morphology on the crystal film surface were analyzed. Oonditions for the stable liquid phase epitaxy were probed.

Key words: solution growth, semimagnetic semiconductor, OdMnTe, interface stablity