聚酰亚胺薄膜电容栅FET湿度传感器的研制

Journal of Applied Sciences ›› 1996, Vol. 14 ›› Issue (1): 86-90.

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DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR

LUO RUFANG, LU DEREN, LU YUPING

Shanghai Institute of Metallurgy, Academia Sinica

Received:1994-04-18 Revised:1995-03-10 Online:1996-03-31 Published:1996-03-31

Abstract

Abstract: A micro HUMFET with a polyimide(PI) film humisensing capaoitor lying on the insulating gate was developed. It is an n-channel enhancement mode device with a meandering gage of 10μm in channel length and >8000μm in channel width and with a double insulating gate(SiO₂+Si₃N₄) of about 30nm.The hnmi-sensing capacitor lying on the insulating gate is an Au-PI-Al capacitor.
The structure design and operation principle of the PI-HUMFET were described.The measuring result of the characteristics of the device was reported and some relative problems were discussed.

Key words: humidity sensor, humidity, polyimide, FET

LUO RUFANG, LU DEREN, LU YUPING. DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR[J]. Journal of Applied Sciences, 1996, 14(1): 86-90.

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DEVELOPMENT OF A POLYIMIDE FILM CAPACITIVE GATE FET HUMIDITY SENSOR

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