Abstract: A complex structure (C-S) which can be used in fabricating the Static Induction Devices (SID)is proposed and designed. This structural devices exhibit typical I-V characteristics and electrical performance, which are the same as those for the surface-gate and buried-gate types of SID. The experiment results indicate that C-S may be adopted as one of basic structures of SID. A prominent merit of C-S is that only ordinary planar technology is used to fabricate the SID.

Key words: static induction devices, complex structure, I-V characteristics