硅中电离率与有效多数载流子浓度的温度关系

Journal of Applied Sciences ›› 1996, Vol. 14 ›› Issue (3): 332-338.

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CALCULATION AND ANALYSIS OF THE IONIZED FRACTION AND THE EFFECTIVE MAJORITY-CARRIER CONCENTRATION IN SILICON AT LOW TEMPERATURES

XIAO ZHIXIONG, ZRENG JIANG, WEI TONGLI

Southeast University

Received:1994-04-24 Revised:1994-10-13 Online:1996-09-30 Published:1996-09-30

Abstract

Abstract: In this paper, from the consideration of the bandgap narrowing effect resulting from heavily doping, a mathematic model for the ionized fraction and the effective majority-carrier concentration which is applicable from 77 to 300K is proposed. The obtained results are in accord with the existing calculative data at low doping concentrations; and at high doping concentrations, it has solved a problem which was not solved in the previous references:the quantitative calculation of the impurity ionized fraction increasing with the increase of the doping concentration.

Key words: ionization fraction, effective majority-carrier concentration, low temperature, Silicon

XIAO ZHIXIONG, ZRENG JIANG, WEI TONGLI. CALCULATION AND ANALYSIS OF THE IONIZED FRACTION AND THE EFFECTIVE MAJORITY-CARRIER CONCENTRATION IN SILICON AT LOW TEMPERATURES[J]. Journal of Applied Sciences, 1996, 14(3): 332-338.

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CALCULATION AND ANALYSIS OF THE IONIZED FRACTION AND THE EFFECTIVE MAJORITY-CARRIER CONCENTRATION IN SILICON AT LOW TEMPERATURES

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