Journal of Applied Sciences ›› 1996, Vol. 14 ›› Issue (4): 403-408.
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WU WEIJUN, LI BINGZONG, SHAO KAI, FANG HUA
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Abstract: CoSi2 is being ivestigated intensively for microelectronics application recently. lit this paper a new method of growing an epitaxial CoSi2 film by the solid state reaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer is described.The variation of structure and sheet resistance of the film with thermal annealing temperature and time is studied. The kinetics and mechanism of the CoSi2/Si solid-phase epitaxy are discussed.
Key words: epitaxial growth, solid state reaction, rapid thermal annealing
WU WEIJUN, LI BINGZONG, SHAO KAI, FANG HUA. THE EXPERIMENTAL STUDY ON GROWTH PROCESS OF CoSi2/Si HETERO-EPITAXY By Co/Ti/Si MULTILAYER SOLID STATE REACTION[J]. Journal of Applied Sciences, 1996, 14(4): 403-408.
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https://www.jas.shu.edu.cn/EN/Y1996/V14/I4/403
