HBT的PN结偏移效应

Journal of Applied Sciences ›› 1997, Vol. 15 ›› Issue (4): 429-435.

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EFFECTS OF DISPLACED P-N JUNCTION OF HBT

ZHANG YUMING¹, ZHANG YIMEN¹, LUO JINSHENG²

1. Mcroelectronics Institute of Xidian University, Xi'an 710071;
2. Mcroelectronics department of Xi'an jiaotong University, Xi'an 710049

Received:1995-07-25 Revised:1996-02-15 Online:1997-12-31 Published:1997-12-31

Abstract

Abstract:

The Hydrodynamic Transport Model is used to simulate the effects of displacemeilt of PN junctions of HBT. The electric characteristics are shown to be drastically altered due to changes in the potential profiles and in recombination in both neutral base and space-charge region of the emitter. The effects of a small displacement of the PN junctions from emitter-base are examined and results for current gains and cutoff frequencies are given.

Key words: computer simulation, hydrodynamic transport model, HBT

ZHANG YUMING, ZHANG YIMEN, LUO JINSHENG. EFFECTS OF DISPLACED P-N JUNCTION OF HBT[J]. Journal of Applied Sciences, 1997, 15(4): 429-435.

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EFFECTS OF DISPLACED P-N JUNCTION OF HBT

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