中文

Journal of Applied Sciences ›› 2002, Vol. 20 ›› Issue (2): 150-152.

• Articles • Previous Articles     Next Articles

The I-V Character of Tunnel Junction Constituted by Ferroelectric Thin Film PbSrTiO3

CHEN Hong-wei1, MIAO Jiang-ping1, ZHAI Ya1, WU Zong-han1, SUN Cheng-xiu2, SUN Ping2   

  1. 1. Department of physics, Southeast University, Nanjing 210096, China;
    2. Department of Electronic Engineering, Southeast University, Nanjing 210096, China
  • Received:2001-03-23 Revised:2001-09-29 Online:2002-06-30 Published:2002-06-30

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Abstract: The ferroelectric thin film PbSrTiO 3 is a typical ferroelectric film with wide application. In this paper, the measurement of the I-V characteristics of this thin ferroelectric system, which was prepared by RF magnetron spattering method is reported. We found, for the first time, the negative resistance phenomenon, and interpreted it through the application of the theory of surface plasmon polariton (SPP) and polarized-wave.

Key words: ferroelectric thin film, surface plasmon polariton (SPP), polarized-wave, negative resistance

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