Abstract: A new structure of HV-NDMOS (high voltage N-channel lateral double-diffused MOSFET) for PDF data driver IC is presented, and the advantage of avoiding punch-through is discussed. The processes and the basic parameters for PDF date drive IC are proposed. At the same time, a novel technique, polycrystalline silicon self-aligned etching used to etch the thick gate oxide of HV-PMOS (high voltage P-channel MOSFET) is also demonstrated. Finally, the test and analyses for the IC are carried out, and this proves that the designed IC can meet practical needs.

Key words: plasma display panel (PDF), data drive, self-aligned, HV-NDMOS, HV-CMOS