选择离子注入GaAs MESFET的旁栅特性研究

Journal of Applied Sciences ›› 2006, Vol. 24 ›› Issue (6): 577-581.

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Sidegating Effect of GaAs MESFET with Planar Selective Ion Implantation

LU Sheng-li, DING Yong, SHI Long-xing

National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China

Received:2005-07-20 Revised:2006-09-12 Online:2006-11-30 Published:2006-11-30

Abstract

Abstract: This letter studies the sidegating effect of GaAs MESFET under the same processing technology of planar selective ion implantation.In the experiments, characteristics of the sidegating effect were analyzed.The observations strongly depend upon the peculiarities of channel-substrate (C-S) junction and impact ionization of traps-EL² under high field.The obtained results are of particular pertinence to the design of low-noise and high integrated GaAs IC' s.

Key words: characteristic, sidegating effect, impact ionization of EL², channel-substrate (C-S) junction

CLC Number:

LU Sheng-li, DING Yong, SHI Long-xing. Sidegating Effect of GaAs MESFET with Planar Selective Ion Implantation[J]. Journal of Applied Sciences, 2006, 24(6): 577-581.

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Sidegating Effect of GaAs MESFET with Planar Selective Ion Implantation

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