基于阈值电压的IGBT芯片疲劳失效模型

doi:10.3969/j.issn.0255-8297.2022.05.015

Abstract

Abstract: In order to effectively evaluate the health status of IGBT during its whole life cycle, the fatigue failure mechanism of IGBT chip was studied based on the theory of semiconductor physics, and the effect of charge density at gate interface on threshold voltage was analyzed. Taking the threshold voltage as the failure characteristic quantity of IGBT, the fatigue failure model of IGBT chip was established on the basis of studying the change rule of threshold voltage with fatigue failure time. An IGBT threshold voltage test platform was built, and IGBT aging experiments were performed to verify that the model proposed in this paper can accurately characterize and estimate the aging degree of IGBT chips, and the correctness and rationality of the failure model were verified.

Key words: insulated gate bipolar transistor, chip fatigue failure, threshold voltage, failure mechanism, life evaluation

CLC Number:

TP303+.1

LI You, CAO Jiwei, HAO Guangyao, YAN Ge, LIU Hongxiao. Fatigue Failure Model of IGBT Chip Based on Threshold Voltage[J]. Journal of Applied Sciences, 2022, 40(5): 865-875.

References

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Fatigue Failure Model of IGBT Chip Based on Threshold Voltage

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