Journal of Applied Sciences ›› 1993, Vol. 11 ›› Issue (1): 31-36.
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SUN CHENGLONG, DU GENDI, GUO FANGMIN, CHEN SIQIN, LIN SUIJUAN, HU SUYING
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Abstract: We report the principle of reactive ion etching of the polyimide film in piire O2 or SF6 + O2 mixed gases plnsmas. Anisotropic etching techniques are used to etch the polyiroide film whose thickness is 0-4μm. Excellent patterns with straight sidewalls are obtained. The equipment used in the etching process is the Plasraalab Up Etcher made by Oxford Plasma Technology Ltd (UK).
Key words: polyimide, sidewall, reactive ion etching
SUN CHENGLONG, DU GENDI, GUO FANGMIN, CHEN SIQIN, LIN SUIJUAN, HU SUYING. REACTIVE ION ETCHING OF POLYIMIDE FILM USING SF6 +O2[J]. Journal of Applied Sciences, 1993, 11(1): 31-36.
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https://www.jas.shu.edu.cn/EN/Y1993/V11/I1/31
