Table of Content

31 March 1993, Volume 11 Issue 1

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Articles

THE INVESTIGATION OF ANTIREFLECTIVE COATING OF DIAMOND LIKE FILMS ON SILICON SOLAR CELLS

AN QILIN, XIA YIBEN, JU JIANHUA, SHI WEIMIN, WANG HONG

1993, 11(1):  1-4. 

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The spectrum response of silicon solar cells can be obviously improved by using diamond-like films as antireflective coating. The experimental results show that the increase of the short-circuit current (I_sc) is about 38%. The spectrum response value is increased in a relatively broad spectrum range and the antireflective efficiency reaches the maximum within the range from 650 nm to 750 nm. It is also found that in the range of wavelength, from 660 nm to 950 nm, the quantum efficiency approximately approaches to 1.

OPTICAL ABSORPTION OF ELECTRON-BEAM EVAPORATED a-Si_1-xCo_x FILMS

GAN RUNJING, ZHANG FANGQING, ZHANG JINYAN, CHEN GUANGHUA

1993, 11(1):  5-10. 

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The optical absorption properties of electron-beam-evaporated α-Si_1-xCo_x films have been atudied. The result shows that the changes of the component x in the films affect the optical absorption in the long wave approaching that of the infrared more sensitively than in the short wave; the sensitive region of the optical absorption is in the 0.10 at% < x < 2.00 at% region. In the investigated components, when the component a; increases, the optical band gap of the film narrows from 1.50 eV to 1.28 eV. The experimental result is analysed and discussed with Cody's disorder theory of a-Si film.

THE INVERSION LAYER RESISTANCE IN INDUCED INVERSION LAYER SOLAR CELLS UNDER OPERATING CONDITIONS

ZHANG XIUMIAO

1993, 11(1):  11-15. 

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In this paper a series of equations, which determines the inversion layer resistance in an induced inversion layer solar cell is given. Our study ia different from the previous work in theory as the dependence of the inversion-layer resistance on the operating conditions is considered, and the effects of the interface charges at the oxide-silicon interface and the image charges at the outer surface are taken into account in the analysis. Taking the SiN insulator layer solar cell as a practical example, we investigate the relationship between the Inversion layer resistance and the operating voltage in the induced inversion layer solar cells of the SiN-SiO₂-Si structure. The result indicates that the inversion layer resistance has a minimum value while the operating voltage is near 0.4V, and that when the operating voltage is higher than 0.4V, a drastic increase of the inversion layer resistance will appear.

ILLUMINATION AND HEAT ANNEALING OF a-Sl:H SOLAR CELLS

ZHENG JIAGUI, PENG LIANGHUAN, ZHOU XINMING, QIU SHANGYUAN, CAI WEI, LUO ZHAOHE, CAI YAPING

1993, 11(1):  16-22. 

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The performance and stability of a-SiH solar cells were studied under various illumination conditions and with the heat annealing method. We found that the degradation of cell performance was due mainly to the reduction of fill-factor decrease, and that the stability of the cell was improved by heat annealing at 80-120℃. The experimental results were discussed.

ISOTHERMAL DECAY CURRENT (IDC) METHOD AND ITS APPLICATION TO TRAPS IN ORGANIC SOLIDS

ZHOU SHUQIN, JIN XIANGFENG

1993, 11(1):  23-30. 

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The theory and experimental technique for the Isothermal Decay Current (IDC) method were discussed in this paper. The applications of the IDC method to α-CuPc, α-CuPc/PVK, Trans-PPA, DD-PPA thin films were described. The mean energy level E_m and distribution parameters _σ of Gaussian distributed traps fitted by multiple regression, the total occupied density of states N₀f₀ and the frequency factor v for the carrier detrapped were evaluated.

REACTIVE ION ETCHING OF POLYIMIDE FILM USING SF₆ +O₂

SUN CHENGLONG, DU GENDI, GUO FANGMIN, CHEN SIQIN, LIN SUIJUAN, HU SUYING

1993, 11(1):  31-36. 

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We report the principle of reactive ion etching of the polyimide film in piire O₂ or SF₆ + O₂ mixed gases plnsmas. Anisotropic etching techniques are used to etch the polyiroide film whose thickness is 0-4μm. Excellent patterns with straight sidewalls are obtained. The equipment used in the etching process is the Plasraalab Up Etcher made by Oxford Plasma Technology Ltd (UK).

THE MODIFICATION OF SINGLE CRYSTAL n-Zn_xCd_1-xTe PHOTOELECTRODE BY USING FeCl₃,Pb(NO₃₂ DIPPING

FAN QINBAI, CAI WENBIN, DENG XUNNAN

1993, 11(1):  37-43. 

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The photoelectric effect of the n-Zn_xCd_1-x/Te (x=0.01-0.04) single crystal electrode is generally rather low. However, the photocurrent is improved apparently with FeCl₃ dipping. Using Pb(NO₃)₂ as a dipping solution, both the fill factor and open-circuit voltage rise significantly. The conversion efficiency is enhanced to 10.2%. The cyclic voltammetric curves for the electrodes treated under different conditions have been measured. It is found that the electrode dipped in FeCl₃ has the largest cathodic leakage current, and that there is a reduction peak at-0.9V(vs. S. C. E.). The one dipped in Pb(NO₃)₂ has the beat stability. The modification mechanism of this electrode has been discussed in detail.

COMPUTER SIMULATION OF SPUTTERING OF THE FIRST WALL MATERIALS IN FUSION REACTOR

SHAO QIYUN, HUO YUKUN, CHEN JIANXIN, GAO XINGHUA

1993, 11(1):  44-50. 

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In this paper, the sputtering caused by fusion of α-particles in the first wall of C, W, Be, SiO and stainless steel (Fe_0.73Cr_0.18Ni_0.09) is investigated by using the Monte Carlo simulation, which is based on the binary collision approximation. The dependence of sputtering yields of the above-mentioned materials on the incident energy as well as the comparisons of results calculated with The Monte Carlo method with results from experiments are discussed. Under the condition of multi-energy a-particles bombardment, the sputtering yields, energy distribution, angular distribution and depth distribution of the origin of the sputtered particles, as well as the effect of incidence angle on sputtering yields are presented. The results show that under the same incident condition, the sputtering yield of stainless steel is higher than the yields of other materials, and that the yields of the rest are almost equal.

STUDY ON INCLUSION COMPLEX OF CAFFEINE AND β-CYCLODEXTRIN

HUANG WEIJUN, ZHOU YANZHU, JIANG MAN, LI LIPU, JIN SHUNZHI, TAN FU

1993, 11(1):  51-57. 

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The inclusion complex of caffeine and β-cyclodextrin was prepared, and its properties were studied by using the thermogravimetry-differential thermal analysis, nuclear magnetic resonance and infrared spectroscopy. The experi mental results showed that the caffeine molecule was included in the hydrophobic cavity of β-cyclodextrin molecule and its thermal stability was increased.

ON THE ADSORPTION OF REAL GAS BY STATISTICAL MECHANICS

YANG QINGXIAN

1993, 11(1):  58-64. 

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In this paper, we depict the interaction between gas molecules by the Keesom, potential, and study adsorption by the application of statistical mechanics, from which we deduce the adsorption isotherm equation. We find that the theoreti cal isotherm agrees with the experimental one, and that the equation of BET is its limit form, when the interaction between gas molecules is negligible.

THE ANALYSIS OF TELECOMMUNICATION SYSTEM OF PERIODICALLY FLUCTUATING TRAFFIC FLOW

HUANG JUN, CHENG SHIXIN

1993, 11(1):  65-70. 

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As communication services are being fontinously extended, it is urgently necessary to carvy on the analysis of non-stationary flow. This paper extends the traditional method used to deal with the stationary traffic flow, to a new method which can be used to tackle the periodically fluctuating one.

PIEZOELECTRICITY IN POLY (VINYL CHLORIDE) AND THE ESR ANALYSIS

OUYANG MENG, GONG KECHENG, YANG WEI, WU ZHENYAO, JIANG WANLAN

1993, 11(1):  71-74. 

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The relationship between the piezoelectricity in poly (vinyl chloride) and the polarizing field, and the depolarization behaviour of poly (vinyl chloride) are discussed. The piezoelectric mechanism of the polarized poly (vinyl chloride) is studied by using ESR.

IDENTIFICATION AND OPTIMAL DESIGN PROBLEMS IN ELECTROSTATIC FIELDS AND THEIR EXPERIMENT

HUANG GUANGYUAN, SUN MAOTONG, DONG FAN, XUE YIBING

1993, 11(1):  75-82. 

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The problems considered are how to estimate the charge distribution in an eletrostatic field by some known potential data at certain points and how to design the optimal charge distribution in an electrostatic field such that its potential distribution fits a given state as well as possible. These problems are motivated by physical prospecting and biomedicine. Some algorithms for solving these problems are derived by making use of optimization techniques, and some physical experiments are given for judging the digital simulation results derived from these algorithms. The micro-computer is employed In these experiments.

Research Notes

A THEOREM ON HOPFIELD NEURAL NETWORK

LUO FALONG, YANG JUN

1993, 11(1):  83-85. 

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This paper presents a theorem concerning the dynamic range of the Hopfield neural network. We show that the input voltage of each neuron in the Hopfield network is bounded and the boundness is computed in a closed form which provides the foundation for designing physical systems, such as electronic circuits.

DEVELOPMENT OF POLYIMIDE FILM-BASED CAPACITIVE TYPE HUMIDITY SENSOR

LOU RUFANG, LU YUPING, BIAN WEIYONG, ZHU QINYANG, CHEN YUNAN, LI XIAOHONG, ZHANG JIANAN

1993, 11(1):  86-90. 

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This paper describes a capacitive type relative humidity sensor made of polyimide film. The device is fabricated with standard 10 processing techniques. We find the response curve is almost linear over the whole range of relative humidity; sensor hysteresis and inaccuracy are lower than ±3% RH; and the response time for 63.2% of a step change in humidity is less than 15s. The stability in high humidity, effect of temperature on the response character and principle of operation are discussed.

EXPERIMENTAL STUDY OF SELECTIVITY FOR OPTIC-GAS SENSING OF SnO₂:Sb FILM

GUO SIGAN, ZHENG SHUNXUAN, YU YONGAN

1993, 11(1):  91-94. 

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We observed the improvement of sensitivity of optio-gas sensing in ethanol vapour,and the reduction of sensitivity in acetone vapour when SnO₂ film was mixed with, Sb (0.1Wt%). This may provide the experimental basis for developing an optio-gas sensing element having selectivity.