Dynamic Simulation of Heat Treatment Process in Core-Cladding Junction Region of Aluminum-Doped Germanium-Core Optical Fibers
ZHONG Shuangqi, DU Yifan, MA Zecheng, XU Sitao, ZHAO Ziwen
2026, 44(2):
198-207.
doi:10.3969/j.issn.0255-8297.2026.02.002
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For the heat treatment preparation and modification of pn junction devices in germanium-core fibers, this study selected the core-cladding junction region as the research focus and adopted a typical p-type germanium material with the host element aluminum as the doping element. An aluminum (Al)-doped germanium (Ge)/silicon dioxide (SiO2) interface model was established by using Materials studio software. Dynamic simulations of the heat treatment process for pn junctions in germanium-core fibers were conducted at different temperatures, specifically 500 ℃, 600 ℃, 660 ℃, 700 ℃, 727 ℃, and 827 ℃. The mean square displacement of the dopant atoms Al, diffusion coefficients, and cellular parameter changes of the Al-doped Ge/SiO2 structure were analyzed at different temperatures. It was observed that the diffusion of Al atoms in the structure decreased progressively at 500 ℃, 600 ℃, and 660 ℃, while it increased at 700 ℃, 727 ℃, and 827 ℃. This phenomenon preliminarily indicates the displacements of dopant atoms induced by the temperature increase lead to changes of atomic positions in the crystals and ultimately result in the alteration of the properties of pn junctions within germanium-core fibers. Moreover, the stress variations and stress-strain relationship of the Al-doped Ge/SiO2 structure were investigated. It was found that the internal stress in germanium-core optical fiber is manifested as tensile stress and the trend of tensile stress with temperature is consistent with the changes in structural cell parameters. Additionally, the stress-strain relationship was observed to be proportional at different temperatures. For temperatures of 500 ℃, 600 ℃, 660 ℃, 700 ℃, and 727 ℃, the elastic modulus decreases as the temperature rises; however, when the temperature reached 827 ℃, the elastic modulus increased. These findings provide important insights for optimizing the heat treatment modification of junction-type devices in semiconductor-core fibers.