Abstract: In this paper a series of equations, which determines the inversion layer resistance in an induced inversion layer solar cell is given. Our study ia different from the previous work in theory as the dependence of the inversion-layer resistance on the operating conditions is considered, and the effects of the interface charges at the oxide-silicon interface and the image charges at the outer surface are taken into account in the analysis. Taking the SiN insulator layer solar cell as a practical example, we investigate the relationship between the Inversion layer resistance and the operating voltage in the induced inversion layer solar cells of the SiN-SiO₂-Si structure. The result indicates that the inversion layer resistance has a minimum value while the operating voltage is near 0.4V, and that when the operating voltage is higher than 0.4V, a drastic increase of the inversion layer resistance will appear.

Key words: inversion layer resistance, solar cellg, semiconductors