Journal of Applied Sciences ›› 1994, Vol. 12 ›› Issue (3): 223-226.
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HUANG QINGAN, ZHANG HUIZHENG, CHEN JUNNING, TONG QINYI
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Abstract: A method of measuring the stress in silicon with the Raman spectrum is introduced. The stress due to silicon direct bonding is studied using the spectrum.It has been shown that there exists local tensile or oompressive stress in bonded silicon after high temperature bonding.The stress is as large as 7.5×103N/cm2.
Key words: silicon direct bonding, silicon stress, Raman spectrum
HUANG QINGAN, ZHANG HUIZHENG, CHEN JUNNING, TONG QINYI. RAMAN SPECTRUM ANALYSIS OF STRESS DUE TO SILICON DIRECT BONDING[J]. Journal of Applied Sciences, 1994, 12(3): 223-226.
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https://www.jas.shu.edu.cn/EN/Y1994/V12/I3/223
