Abstract: The actions between electrons and atoms of resistS or substrate in electron beam exposure are studied in this paper by applying the Monte Carlo method. The scatter trajectories of electrons in PMMA (polymethylmethacrylate) resists Prepared by Langmuir Blodgett (LB) techniques or spining cast on Si substrate or Si substrate covered with Cr film and the back-scattered yield have been calculated in different conditions. A refraction model of high-energy electron in multilayer medium has been put forward to describe the changes of scatter distance and scatter angle of the electron when it comes from one layer into another layer. The results prove that there is a smaller back-scattered yield in LB resists for electrons and the purpose decrease the proximity effect can be reached no matter whether lower or higher energy iS adopted in electron beam LB resist exposure.

Key words: Monte Carlo simulation, LB techniques, electron beam exposure, scatter, back-scattered yield