未掺杂LECSIGaAs中总EL2浓度及其费米占据函数的分布

Journal of Applied Sciences ›› 1995, Vol. 13 ›› Issue (2): 189-194.

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DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs

YANG RUIXIA¹, LI GUANGPING², WANG QIN²

1. Hebei Institute of Technology;
2. Tianjin Electronic Materials Research lnstitute

Received:1993-05-07 Revised:1993-07-17 Online:1995-06-30 Published:1995-06-30

Abstract

Abstract: The distributions of ionized and neutral EL2 concentrations are measured by the multiple wavelength infrared absorption method in the undoped LECSI GaAs.The distributions of the total EL2 concentration and its Fermi occupancy function are also obtained from the measurement of the distrbutions of the ionized and neutral EL2 concentrations.The results indicate that all of the distributions of the ionized EL2 concentration,neutral EL2 concentration,total EL2 concentra-tion, and EL2 Fermi occupallcy function are inhomogeneous;that both total and neutral EL2 concentrations radial distributions are W-shaped;and that the W-shaped radial distribution of the neutral EL2 concentration is not due to the fluctuation of the Fermi occupancy function.

Key words: EL2, infrared absorption, distribution, concentration, GaAs

YANG RUIXIA, LI GUANGPING, WANG QIN. DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs[J]. Journal of Applied Sciences, 1995, 13(2): 189-194.

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https://www.jas.shu.edu.cn/EN/Y1995/V13/I2/189

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DISTRIBUTION OF TOTAL EL2 CONCENTRATION AND ITS FERMI OCCUPANCY FUNCTION IN UNDOPED LECSI GaAs

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